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Training in: Semiconductor physics and materials properties as well as synchrotron radiation microscopy.
So far, the mechanisms responsible for the degradation, mitigation or enhancement of the nanostructure and device performances have been mostly revealed separately without establishing a direct link between properties and eventual operation or failure. Although the interplay between the microscopic properties and functionality is essential to design better materials and improve device capabilities, such in operando studies have remained challenging with nanoscale resolution.
The research will focus on operando investigations of III-Sb nanostructures and devices using state-of-the-art hard X-ray nanobeams. We seek to investigate III-Sb nanostructures using X-ray nanobeams, owing to its large penetration depths, high spatial resolution and sensitivity. Only our ability to control multiple property-function relationships taking place in the spatial and time domains under real working conditions will allow us to obtain their full potential.
For this purpose, the hard X-ray nanoprobes of different synchrotron radiation facilities will be exploited to gather the experimental data. The candidate will learn and use multiple X-ray based techniques like X-ray fluorescence, X-ray diffraction, X-ray absorption, X-ray beam induced current and X-ray excited optical luminescence. With them, he will analyze the electronic structure, short- and long-range order, composition, optical as well as transport response of different materials and devices at the nanoscale.
How to Apply
- An internal application form listing your academic and job records (.docx template available here).
- A free format CV (pdf format max 2 Mb)
- Official documentation such as degree and grades certificates will be required at a later stage.