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Training in: Low temperature and room temperature scanning tunneling microscopy, scanning tunneling induced luminescence.
Modern epitaxy methods that allow for the atomic precise creation of semiconductor structures need a characterization technique that can resolve important aspects such composition, interfaces and defects at the atomic scale. In order to fully understand nanostructured materials, there is also a demand for the characterization of the opto-electronic properties at the atomic scale.
The research of this ESR will focus on III-Sb nanostructures and devices created and studied elsewhere in the consortium. The structural properties like size, shape and composition and the electronic properties of nanostructures based on III-Sb materials will be determined and analyzed down the properties of individual Sb atoms and other relevant individual defects appearing in these materials.
Cross-sectional Scanning Tunneling Microscopy has shown to be an excellent tool that can image nanostructured material at the atomic scale and to probe the opto-electronic properties at the same length scale. Low temperature (4K and 77K) and room temperature scanning tunneling microscopy in conjunction with scanning tunneling induced luminescence will be used to obtain relevant information in novel III-Sb materials and devices.
How to Apply
- An internal application form listing your academic and job records (.docx template available here).
- A free format CV (pdf format max 2 Mb)
- Official documentation such as degree and grades certificates will be required at a later stage.