5 of 14
Training in: Optical and device design and modelling, epitaxial semiconductor growth, optical and structural materials characterization, device processing, electroluminescence.
Single-photon sources are capable of allowing 100% secure communication guaranteed by the laws of quantum mechanics. However, to be practical they should be compact, fast, electrically stimulated, emit one (and no more than one) photon with high probability, work at room temperature (or above) and operate within the optical telecommunications band of 1250 to 1650 nm, ideally at 1550 nm. Despite intensive research, a single photon source with these characteristics remains elusive.
It is highly likely that these requirements will be fulfilled by a single-photon LED (SPLED) with self-assembled quantum nanostructures. However, conventional InAs quantum dots devices have struggled to reach the right wavelength and operating temperature. III-Sb’s, namely GaSb quantum rings (QRs), naturally emit in the right band, readily confine holes at room temperature, and are highly suitable for optical-cavity-enhanced emission.
The work will focus on the design, epitaxial growth, material characterization, processing and testing of GaSb QR (SP)LEDs, including the further development of single electron filters to facilitate single photons on demand from the QRs. The research will benefit from a related on-going programme on telecoms wavelength QR VCSELs.
How to Apply
- An internal application form listing your academic and job records (.docx template available here).
- A free format CV (pdf format max 2 Mb)
- Official documentation such as degree and grades certificates will be required at a later stage.