11 of 14
Training in: Development, optimization and use of tight binding based electronic structure codes, multiscale-coupling with continuum model device simulation tools, device modelling and simulation.
Reliable and efficient electronic structure calculations are a mandatory prerequisite for analysis and design of nanostructures. Atomistic models like empirical tight binding (ETB) have proven particularly useful for the simulation of nanostructures and disordered alloys. Successful application of atomistic models in device simulation requires adequate model parameterizations, efficient solvers and coupling with continuum based device TCAD software.
The research will focus on further development of an ETB code. A tool for generation of reliable parameter sets and improved methods for including mechanical strain will be implemented. Efficiency of the numerical solution strategies shall be improved, and suitable linking with continuum device models has to be further developed. The developed tools will be used to simulate relevant III-Sb devices.
Existing codes for empirical tight binding and parameter generation will be further developed and optimized. Parameter generation based on optimization strategies will be improved and generalized. Improved ways to include strain in the atomistic tight binding described in literature model will be evaluated and implemented. The numerical efficiency of the tight binding code will be improved by optimizing the built-in solvers or by linking to existing parallelized libraries. Efficient strategies for the multiscale coupling with existing device TCAD software will be developed.
How to Apply
- An internal application form listing your academic and job records (.docx template available here).
- A free format CV (pdf format max 2 Mb)
- Official documentation such as degree and grades certificates will be required at a later stage.