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Training in: High resolution scanning transmission electron microscopy, atomic resolution X-ray and electron energy-loss spectroscopy, scanning electron microscopy, simulation and image/data analysis.
Antimonide semiconductors have many useful properties that set them apart from other III-V materials, including small band gaps (e.g. leading to low energy devices that save electricity) and very high carrier mobilities (e.g. giving very fast devices). However, they are difficult to manufacture in comparison with silicon and material quality is still an important issue. Electron microscopy allows the study of structure and defects at the atomic scale and gives essential information that informs crystal growth and device manufacture.
The research will focus on atomic scale investigations of III-Sb nanostructures and devices using state-of-the-art aberration-corrected electron microscopy. We seek to measure the composition of interfaces at the atomic scale and understand the origin of defects such as dislocations that form in the material. The aim of the project is to measure electronic structure, short- and long-range order, composition, optical and transport response of different materials and devices, linking these measurements to device processing and materials production.
The candidate will learn and use multiple electron microscopy based techniques including aberration-corrected scanning transmission electron microscopy(ac-STEM), electron channeling contrast imaging (ECCI), electron-beam induced current (EBIC) and electron-beam excited optical luminescence (Cathodoluminescence, CL).
How to Apply
- An internal application form listing your academic and job records (.docx template available here).
- A free format CV (pdf format max 2 Mb)
- Official documentation such as degree and grades certificates will be required at a later stage.