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Training in: Optical and device design and modelling, epitaxial semiconductor growth, optical and structural materials characterization, device processing, electroluminescence.

Third generation solar cells are being intensively investigated today as a main route towards high efficiency photovoltaics. Limitations are nowadays due to the lack of materials and nanostructures with the required properties and band alignments. The field could be boosted by developing the appropriate nanostructure architectures, which should allow a high tunability of strain and band structure, but ultimately also of wavefunctions and radiative lifetimes. On one hand, the GaAs-based epitaxy is starting to be mature enough to allow the design of complex nanostructure architectures allowing accurate strain and band structure engineering. On the other hand, mixing antimonides with GaAs-based materials allow for the realization of peculiar type-II band alignments and wavefunction geometries, as well as for the tuning of radiative carrier lifetime.

We propose to take advantage of the combination of both facts to fabricate Sb-based nanostructures grown on GaAs with an unprecedented control over wavefunction geometry and overlap. These novel nanostructures will be used to fabricate third generation solar cells.

The candidate will do the growth of the novel nanostructures by molecular beam epitaxy. Optical and structural characterization techniques such as photoluminescence spectroscopy and x-ray diffraction will be routinely used by the ESR to characterize the nanostructures. Solar cell devices will be fabricated in a clean room, and studied by dark/light IV curves, photocurrent spectroscopy etc.


Institution: Universidad Politécnica de Madrid (UPM) is the largest Spanish technological university, holding two recognitions as Campus of International Excellence. More than 2,400 researchers carry out their activity at UPM. UPM is the first Spanish university in the capture of external resources in a competitive regime, signing annually around 600 contracts with private businesses. There are more than 2.000 students enrolled in PhD programs at UPM.
Institute/Laboratory: The Institute for Systems based on Optoelectronics and Microtechnology (ISOM) is an interdepartmental institute at UPM researching on science and technology of semiconductor and magnetic nanostructures and devices for photovoltaics, communication systems, optoelectronics and spintronics. It has a strong tradition and expertise in the growth of semiconductor nanostructures by molecular beam epitaxy. Over 30 researchers work at ISOM together with 25 PhD and MSc students.
Location/City: ISOM-UPM is located at the Moncloa Campus (Madrid, Spain), in the city center of Madrid.


We seek an excellent, open-minded and team-spirited PhD candidate with:
Graduation: a Physics, Chemistry or Engineering degree.
Post-graduation: successful candidates will have a separate Master in a scientific field, or, an integrated Master (MPhys, MSci, MEng, MChem etc.). Previous experience in a research environment involving solid state physics, semiconductor materials or similar will be positively considered.
Other: The successful candidate should have good knowledge and interest in both experimental and theoretical work.

How to Apply

Candidates can apply to a maximum of four different ESR positions in the network using the links below. Applications must include the following documents:
  1. An internal application form listing your academic and job records (.docx template available here).
  2. A free format CV (pdf format max 2 Mb)
  3. Official documentation such as degree and grades certificates will be required at a later stage.
The deadline for application is 31st January 2021.
Attempts to apply to more than four positions using different registration profiles will invalidate your candidature.