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Training in: Optical and device design and modelling, epitaxial semiconductor growth, optical and structural materials characterization, device processing, electroluminescence.
Third generation solar cells are being intensively investigated today as a main route towards high efficiency photovoltaics. Limitations are nowadays due to the lack of materials and nanostructures with the required properties and band alignments. The field could be boosted by developing the appropriate nanostructure architectures, which should allow a high tunability of strain and band structure, but ultimately also of wavefunctions and radiative lifetimes. On one hand, the GaAs-based epitaxy is starting to be mature enough to allow the design of complex nanostructure architectures allowing accurate strain and band structure engineering. On the other hand, mixing antimonides with GaAs-based materials allow for the realization of peculiar type-II band alignments and wavefunction geometries, as well as for the tuning of radiative carrier lifetime.
We propose to take advantage of the combination of both facts to fabricate Sb-based nanostructures grown on GaAs with an unprecedented control over wavefunction geometry and overlap. These novel nanostructures will be used to fabricate third generation solar cells.
The candidate will do the growth of the novel nanostructures by molecular beam epitaxy. Optical and structural characterization techniques such as photoluminescence spectroscopy and x-ray diffraction will be routinely used by the ESR to characterize the nanostructures. Solar cell devices will be fabricated in a clean room, and studied by dark/light IV curves, photocurrent spectroscopy etc.
How to Apply
- An internal application form listing your academic and job records (.docx template available here).
- A free format CV (pdf format max 2 Mb)
- Official documentation such as degree and grades certificates will be required at a later stage.