14 Marie-Curie PhD Positions Available

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  • CSIC1: III-Sb quantum dots for spin-photon interfaces and quantum communications (Spain)

    Training in: Low temperature optical micro-spectroscopy, magnetic and electronic properties of semiconductors, energy band theory and simulation.

  • CSIC2: Smart synchrotron nanoprobe investigations of III-Sb devices (SPAIN)

    Training in: Semiconductor physics and materials properties as well as synchrotron radiation microscopy.

  • UPM: Novel III-Sb quantum materials for photovoltaics (Spain)

    Training in: Optical and device design and modelling, epitaxial semiconductor growth, optical and structural materials characterization, device processing, electroluminescence.

  • ULANC1: III-Sb charge-storage devices for non-volatile random access memories (United Kingdom)

    Training in: Semiconductor memory device and chip design and modelling, device and chip processing, electrical characterization.

  • ULANC2: Telecoms-wavelength GaSb quantum ring single-photon LEDs (United Kingdom)

    Training in: Optical and device design and modelling, epitaxial semiconductor growth, optical and structural materials characterization, device processing, electroluminescence.

  • UOW: Advanced electron microscopy investigations of III-Sb devices (United Kingdom)

    Training in: High resolution scanning transmission electron microscopy, atomic resolution X-ray and electron energy-loss spectroscopy, scanning electron microscopy, simulation and image/data analysis.

  • TUE1: Atomic scale characterization of III-Sb quantum materials (The Netherlands)

    Training in: Low temperature and room temperature scanning tunneling microscopy, scanning tunneling induced luminescence.

  • TUE2: Magnetic empirical tight binding methods for III-Sb devices (The Netherlands)

    Training in: Electronic structure simulation techniques including empirical tight-binding, continuum envelope function techniques, pseudopotential, and density functional theory techniques.

  • TUB: Evolutionary inverse design numerical approaches for improved III-Sb devices (Germany)

    Training in: Electronic structure simulation techniques including continuum envelope function and density functional theory techniques, deep learning, and evolutionary strategies.

  • UWUE: Development of antimony based interband cascade nanostructures and superlattices (Germany)

    Training in: Epitaxial growth of novel semiconductor nanostructures, optical and structural characterization of materials, device processing in clean room and optoelectronic characterization.

  • UNITOV: Multiscale simulation of novel III-Sb quantum materials and devices (Italy)

    Training in: Development, optimization and use of tight binding based electronic structure codes, multiscale-coupling with continuum model device simulation tools, device modelling and simulation.

  • AIXTRON: Optimization of MOCVD technology and industrial aspects and upscaling of III-Sb MOCVD technology (Germany)

    Training in: Design, carry out and analyzing experiments to find the optimum MOCVD growth conditions for future MOCVD technology up-scale. Use of simulation for advanced reactor design.

  • IQE: Wafer engineered long wave infrared photodiodes (United Kingdom)

    Training in: Growth, optical and structural characterization of InAs/InAsSb photodiodes on different substrates.

  • NEXTNANO: Multiband quantum transport in III-Sb based devices (Germany)

    Training in: Modeling of quantum transport using the nonequilibrium Green’s function (NEGF) method in interband cascade devices, type-II superlattices and memory devices.